Development of 6.00 Å graded metamorphic buffer layers and high performance In[sub 0.86]Al[sub 0.14]As∕In[sub 0.86]Ga[sub 0.14]As heterojunction bipolar transistor devices-Reference-Cited by-同舟云学术

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Development of 6.00 Å graded metamorphic buffer layers and high performance In[sub 0.86]Al[sub 0.14]As∕In[sub 0.86]Ga[sub 0.14]As heterojunction bipolar transistor devices

Published:2006 Issue:3 Volume:24 Page:1492
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Cavus A.,Sandhu R.,Monier C.,Cox C.,Pascua D.,Gutierrez-Aitken A.,Noori A.,Hayashi S.,Goorsky M.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Toward Ga‐Free Wavelength Extended 2.6 µm InAsP Photodetectors with High Performance;Advanced Functional Materials;2023-11-16

2. Crystal lattice tilt analysis in gradient composition layers by electron and X-ray diffraction;Journal of Physics: Conference Series;2019-12-01

3. Low-Temperature and Metamorphic Buffer Layers;Handbook of Crystal Growth;2015

4. Metamorphic InGaAs p-i-n Photodetectors with 1.75 μm Cut-Off Wavelength Grown on GaAs;Chinese Physics Letters;2010-03

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