Characterization of hydrogen etched 6H–SiC(0001) substrates and subsequently grown AlN films-Reference-Cited by-同舟云学术

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Characterization of hydrogen etched 6H–SiC(0001) substrates and subsequently grown AlN films

Published:2003-03 Issue:2 Volume:21 Page:394-400
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Hartman J. D.,Roskowski A. M.,Reitmeier Z. J.,Tracy K. M.,Davis R. F.,Nemanich R. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1539080

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Przegląd metod czyszczenia powierzchni podłoży SiC;PRZEGLĄD ELEKTROTECHNICZNY;2019-10-05

2. Hydrogen plasma etching mechanism at the a-C:H/a-SiCx:H interface: A key factor for a-C:H adhesion;Applied Surface Science;2018-10

3. 4 Surface and Chemical Considerations in Heteroepitaxy;Heteroepitaxy of Semiconductors;2016-09-15

4. Charged nano-domes and bubbles in epitaxial graphene;Nanotechnology;2014-03-28

5. Magic angle and height quantization in nanofacets on SiC(0001) surfaces;Applied Physics Letters;2014-02-03

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