Affiliation:
1. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907
Abstract
Design, fabrication, and characterization of close-packed field emitter tips enclosed in an Si trench and stand-alone arrays are presented. The two types of field emitter arrays (FEAs) are fabricated using a combination of high-throughput electron-beam lithography, plasma etching, and anode bonding integration technology. The field emitter array inside the trench shows a higher turn-on voltage compared to the stand-alone array. Without any tip sharpening, a current of 7.5 [Formula: see text]A was observed at 300 V from FEAs inside the trench, while a higher current of 12.5 [Formula: see text]A was observed at the same voltage for the stand-alone array.
Funder
Air Force Office of Scientific Research
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献