Atomistic simulation of fluorocarbon deposition on Si by continuous bombardment with energetic CF+ and CF2+
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.1322652
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion contributions to gas–surface interactions in inductively-coupled fluorocarbon plasmas;International Journal of Mass Spectrometry;2012-12
2. Molecular dynamics simulations of near-surface modification of polystyrene: Bombardment with Ar+ and Ar+/radical chemistries;Journal of Applied Physics;2008-08
3. The application of molecular dynamics to the study of plasma–surface interactions: CFxwith silicon;International Reviews in Physical Chemistry;2008-04
4. Molecular dynamics simulations of CF3 etching of SiC;Thin Solid Films;2008-02
5. Studies of fluorocarbon film deposition and its correlation with etched trench sidewall angle by employing a gap structure using C[sub 4]F[sub 8]∕Ar and CF[sub 4]∕H[sub 2] based capacitively coupled plasmas;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
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