Comparative study of resists and lithographic tools using the Lumped Parameter Model
Author:
Affiliation:
1. Paul Scherrer Institut, 5232 Villigen PSI, Switzerland
2. Laboratoire de photonique et de nanostructures, CNRS, Route de Nozay, 91460 Marcoussis, France
Funder
Horizon 2020 (EU Framework Programme for Research and Innovation)
Publisher
American Vacuum Society
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://avs.scitation.org/doi/pdf/10.1116/1.4967183
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2. Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-12-27
3. Investigation of correlative parameters to evaluate EUV lithographic performance of PMMA;RSC Advances;2022
4. A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope;Beilstein Journal of Nanotechnology;2021-07-02
5. Progress in EUV-interference lithography resist screening towards the deployment of high-NA lithography;Extreme Ultraviolet (EUV) Lithography XII;2021-03-29
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