Influence of silicon nitride passivation on transport properties in InAlAs∕InGaAs∕InP composite channel high electron mobility transistor structures
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Published:2006
Issue:4
Volume:24
Page:1711
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ISSN:1071-1023
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Liu Yuwei,Wang Hong
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics