Hot electron transport across manganese silicide layers on the Si(001) surface-Reference-Cited by-同舟云学术

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Hot electron transport across manganese silicide layers on the Si(001) surface

Published:2006-07 Issue:4 Volume:24 Page:1610-1612
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Stollenwerk A. J.,Krause M. R.,Moore R.,LaBella V. P.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2206195

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy;Journal of Applied Physics;2015-06-28

2. Nanoscale mapping of the W/Si(001) Schottky barrier;Journal of Applied Physics;2014-07-14

3. Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy;AIP Advances;2013-11

4. Ballistic electron microscopy and spectroscopy of metal and semiconductor nanostructures;Surface Science Reports;2009-05-01

5. Probing the hot-electron transport properties and interface band structure ofFe∕Si(001) andFe81C19∕Si(001) Schottky diodes;Physical Review B;2006-10-27

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