Characteristics of double-heterostructure GaAs/AlGaAs laser diodes on Si substrates by selective-area molecular-beam epitaxy
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Published:1990-03
Issue:2
Volume:8
Page:343
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
2 articles.
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