Minimization of suboxide transition regions at Si–SiO[sub 2] interfaces by 900 °C rapid thermal annealing
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Published:1997-07
Issue:4
Volume:15
Page:1074
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
42 articles.
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