Reactive ion etching for mesa structuring in HgCdTe-Reference-Cited by-同舟云学术

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Reactive ion etching for mesa structuring in HgCdTe

Published:1999-09 Issue:5 Volume:17 Page:2503-2509
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Smith E. P. G.,Musca C. A.,Redfern D. A.,Dell J. M.,Faraone L.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581988

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review on plasma-etch-process induced damage of HgCdTe;Infrared Physics & Technology;2018-05

2. A barrier structure optimization for widening processing window in dual-band HgCdTe IRFPAs detectors;Optical and Quantum Electronics;2016-04-22

3. Wet Etching of HgCdTe in Aqueous Bromine Solutions: a Quantitative Chemical Approach;J ELECTRON MATER;2011

4. Ion Beam Based Techniques for Mercury Cadmium Telluride Infrared Detectors;Defence Science Journal;2009-07-27

5. Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material;SPIE Proceedings;2006-05-05

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