Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors-Reference-Cited by-同舟云学术

Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Published:2011-05 Issue:3 Volume:29 Page:031205
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Lo C. F.,Ren F.,Chang C. Y.,Pearton S. J.,Chen S.-H.,Chang C.-M.,Wang S.-Y.,Chyi J.-I.,Kravchenko I. I.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3589808

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1. MOCVD-grown compressively strained C-doped In Ga1−As1−Sb with high-In/Sb content for very low turn-on-voltage InP-based DHBTs;Journal of Crystal Growth;2014-10

2. Sb-based semiconductors for low power electronics;Journal of Materials Chemistry C;2013

3. Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors;Applied Physics Letters;2012-08-13

4. Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2012-04-20

5. Low-Turn-on-Voltage Heterojunction Bipolar Transistors with a C-Doped InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2012-04-01