Metal/semiconductor interfaces on SnO2(110)-Reference-Cited by-同舟云学术

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Metal/semiconductor interfaces on SnO2(110)

Published:1988-05 Issue:3 Volume:6 Page:1593-1598
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Erickson J. W.,Fryberger T. B.,Semancik S.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.575333

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pyrotechnic Delay Compositions Based on BaO2: Not as “Green” as Expected;Molecules;2023-08-19

2. Growth and surface properties of epitaxial SnO2;physica status solidi (a);2013-12-13

3. Investigation of (110) SnO2 growth mechanisms on TiO2 substrates by plasma-assisted molecular beam epitaxy;Journal of Applied Physics;2009-07-15

4. Surface and bulk properties of sputter deposited undoped and Sb-doped SnO2 thin films;Sensors and Actuators B: Chemical;2009-06

5. The surface and materials science of tin oxide;Progress in Surface Science;2005

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