Laser ablation of via holes in GaN and AlGaN∕GaN high electron mobility transistor structures-Reference-Cited by-同舟云学术

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Laser ablation of via holes in GaN and AlGaN∕GaN high electron mobility transistor structures

Published:2006 Issue:5 Volume:24 Page:2246
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Anderson Travis,Ren Fan,Pearton Stephen J.,Mastro Michael A.,Holm Ron T.,Henry Rich L.,Eddy Charles R.,Lee Joon Yeob,Lee Kwan-Young,Kim Jihyun

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization analysis of 355 nm pulsed laser cutting of 6H-SiC;The International Journal of Advanced Manufacturing Technology;2023-12-20

2. Metal Stop Laser Drilling for Blind via Holes of GaN‐on‐GaN Devices;physica status solidi (a);2023-04-04

3. HEMT Inspired GaN Optical Waveguides: Analysis Under Thermal Stress and Prospects;IEEE Transactions on Device and Materials Reliability;2022-09

4. GaN MMICs on a diamond heat spreader with through-substrate vias fabricated by deep dry etching process;Applied Physics Express;2022-02-16

5. Effect of beam profile on nanosecond laser drilling of 4H-SIC;Journal of Laser Applications;2018-08

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