Effect of nitrogen pressure on the fabrication of AlCrFeCoNiCu0.5 high entropy nitride thin films via cathodic arc deposition

Author:

Jiang Tenghao1ORCID,Zhao Hong1ORCID,Tsoutas Kostadinos23ORCID,Sun Lixian4,Liu Hongwei5ORCID,Liu Yanping6ORCID,Xu Fanjun1,Zheng Zhong1ORCID,Bilek Marcela M.237ORCID,Liu Zongwen17

Affiliation:

1. School of Chemical and Biomolecular Engineering, The University of Sydney 1 , Sydney, NSW 2006, Australia

2. School of Physics, The University of Sydney 2 , Sydney, NSW 2006, Australia

3. School of Biomedical Engineering, The University of Sydney 3 , Sydney, NSW 2006, Australia

4. Guangxi Key Laboratory of Information Materials, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, School of Material Science & Engineering, Guilin University of Electronic Technology 4 , Guilin 541004, People’s Republic of China

5. Australian Centre for Microscopy & Microanalysis (ACMM), The University of Sydney 5 , Sydney, NSW 2006, Australia

6. Hunan Key Laboratory for Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University 6 , Hunan 410083, People’s Republic of China

7. The University of Sydney Nano Institute, The University of Sydney 7 , Sydney, NSW 2006, Australia

Abstract

In the past two decades, high entropy alloy (HEA) coatings have attracted great attention due to their superior mechanical properties, outstanding corrosion and oxidation resistance, and exceptionally high thermal stability. In comparison to HEA thin films, high entropy nitrides (HENs) exhibit higher mechanical strength and chemical inertness. In this work, AlCrFeCoNiCu0.5 HEA and HEN thin films were fabricated using a filtered cathodic arc. By regulating the deposition pressure from 0.0005 Pa (HEA thin film) to 0.05 Pa, the nitrogen concentration in each thin film was precisely controlled to tune the mechanical properties. Scanning transmission electron microscopy-energy dispersive spectroscopy revealed that the nitrogen concentration of the films was up to 21.2 at. % at the pressure of 0.05 Pa. The reduced effect of preferential sputtering increased aluminum concentration from 8.3 ± 1.5 to 12.9 ± 2.2 at. % as pressure increased up to 0.05 Pa. X-ray photoelectron spectroscopy further confirmed the formation of AlN and CrN at pressures of 0.01–0.05 Pa. The highest hardness and elastic modulus of the HEN film were 12.4 ± 0.6 and 347.3 ± 17.7 GPa, respectively, which were 84.8% and 131.4% higher than those of the HEA thin film.

Funder

Australian Research Council

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

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