Ultra-thin Al2O3 capped with SiNx enabling implied open-circuit voltage reaching 720 mV on industrial p-type Cz c-Si wafers for passivated emitter and rear solar cells-Reference-Cited by-同舟云学术

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Ultra-thin Al2O3 capped with SiNx enabling implied open-circuit voltage reaching 720 mV on industrial p-type Cz c-Si wafers for passivated emitter and rear solar cells

Published:2021-01 Issue:1 Volume:39 Page:012409
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Kökbudak Gamze¹²^ORCID,Keçeci Ahmet E.¹^ORCID,Nasser Hisham¹^ORCID,Turan Raşit¹³^ORCID

Affiliation:

1. Center for Solar Energy Research and Applications (GÜNAM), Middle East Technical University, Ankara 06800, Turkey

2. Department of Micro and Nanotechnology, Middle East Technical University, Ankara 06800, Turkey

3. Department of Physics, Middle East Technical University, Ankara 06800, Turkey

Funder

TUBITAK

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/6.0000692

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comparative study on alternative industrial manufacturing routes for bifacial n‐PERT silicon solar cells;Progress in Photovoltaics: Research and Applications;2023-05-08

2. Fourteen percent efficiency ultrathin silicon solar cells with improved infrared light management enabled by hole‐selective transition metal oxide full‐area rear passivating contacts;Progress in Photovoltaics: Research and Applications;2021-11-18

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