Formation of silicided shallow p[sup +]n junctions by BF[sub 2][sup +] implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation
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Published:1999
Issue:2
Volume:17
Page:392
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Juang M. H.,Hu M. C.,Yang C. J.
Publisher
American Vacuum Society
Subject
General Engineering