Silicon nanowires analyzed by x-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

Silicon nanowires analyzed by x-ray photoelectron spectroscopy

Published:2024-02-28 Issue:1 Volume:31 Page:
ISSN:1055-5269
Container-title:Surface Science Spectra
language:en
Short-container-title:

Author:

Farid Ghulam¹²^ORCID,Chaitoglou Stefanos¹²^ORCID,Amade Roger¹²^ORCID,Ospina Rogelio¹³^ORCID,Bertran-Serra Enric¹²^ORCID

Affiliation:

1. ENPHOCAMAT Group, Department of Applied Physics, University of Barcelona 1 , C/Martí i Franquès, 1, Barcelona, Catalunya 08028, Spain

2. Institute of Nanoscience and Nanotechnology (IN2UB), University of Barcelona 2 , C/Martí i Franquès, 1, Barcelona, Catalunya 08028, Spain

3. Centro de Investigación Científica y Tecnológica en Materiales y Nanociencias (CMN), Universidad Industrial de Santander 3 , Piedecuesta, Santander, P.C. 681011, Colombia

Abstract

Silicon nanowires were characterized by x-ray photoelectron spectroscopy with an Al Kα (1486.6 eV) excitation source. The sample was fixed to a stainless-steel sample holder with a copper double-sided adhesive tape. Survey spectrum and C 1s, O 1s, and Si 2p core-level spectra were acquired.

Publisher

American Vacuum Society

Link

https://pubs.aip.org/avs/sss/article-pdf/doi/10.1116/6.0003388/20128311/014005_1_6.0003388.pdf

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