Formation of ohmic contacts to n-GaAs using (NH4)2S surface passivation

Author:

Fischer V.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effect of the first antimony layer on AuZn ohmic contacts to p-type InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

2. Ohmic Contacts to II–VI and III–V Compound Semiconductors;Processing of Wide Band Gap Semiconductors;2000

3. Sulfur-modified surface of InP(001): Evidence for sulfur incorporation and surface oxidation;Applied Physics A: Materials Science & Processing;1997-12-01

4. A survey of ohmic contacts to III-V compound semiconductors;Thin Solid Films;1997-10

5. Ohmic contacts to GaAs epitaxial layers;Critical Reviews in Solid State and Materials Sciences;1997-09

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