Study of Ohmic contact resistance to Ga[sub (1−X)]In[sub (X)]As/InP composite channel InP high electron mobility transistors for X=35% to X=81%
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Published:1997-09
Issue:5
Volume:15
Page:1773
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
1 articles.
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