Origin of stress distribution in sputtered x-ray absorber film
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Published:1997-11
Issue:6
Volume:15
Page:2483
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
4 articles.
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1. Characterization and modeling of electrical resistivity of sputtered tungsten films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-05
2. Sputtered tungsten films on polyimide, an application for X-ray masks;Solid-State Electronics;1999-06
3. Characteristics of Ta-based amorphous alloy film for x-ray mask absorbers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-11
4. Properties of sputtered TaReGe used as an x-ray mask absorber material;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-11