Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma-Reference-Cited by-同舟云学术

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

Published:2016-05-24 Issue:4 Volume:34 Page:040603
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:J. Vac. Sci. Technol. A

Author:

Kawakami Masatoshi¹,Metzler Dominik²,Li Chen³,Oehrlein Gottlieb S.²

Affiliation:

1. Electronic Device Systems Business Group, Hitachi High-Technologies Corporation, 794 Higashitoyoi, Kudamatsu, Yamaguchi 744-0002, Japan

2. Department of Material Science and Engineering, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742

3. Department of Physics, Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742

Funder

National Science Foundation

Hitachi

U.S. Department of Energy

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.4949260

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