Fabrication of a lateral p-i-n photodiode in a Si/(Si0.8Ge0.2/Si) superlattice/Si/sapphire structure
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Published:1993-05
Issue:3
Volume:11
Page:1172
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering