Electrical and structural properties of Pt/Ti/p+–InAs ohmic contacts
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Efficiency-optimized near-field thermophotovoltaics using InAs and InAsSbP;Applied Physics Letters;2022-11-07
2. Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data;Journal of Applied Physics;2013-10-21
3. Selective area growth of InAs on InP with dielectric mask;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-05
4. Lower limits to specific contact resistivity;2012 International Conference on Indium Phosphide and Related Materials;2012-08
5. Evaluation of spin polarization inp-In0.96Mn0.04As using Andreev reflection spectroscopy including inverse proximity effect;Physical Review B;2011-04-29
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