Molecular beam deposited zirconium dioxide as a high-κ dielectric for future GaN based power devices-Reference-Cited by-同舟云学术

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Molecular beam deposited zirconium dioxide as a high-κ dielectric for future GaN based power devices

Published:2013-05 Issue:3 Volume:31 Page:03C111
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Freese Annett,Grube Matthias,Wachowiak Andre,Geidel Marion,Adolphi Barbara,Schmult Stefan,Mikolajick Thomas

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4793764

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates;Applied Physics Letters;2016-10-17

2. Detailed analysis of oxide related charges and metal-oxide barriers in terrace etched Al2O3and HfO2on AlGaN/GaN heterostructure capacitors;Journal of Applied Physics;2015-09-28

3. Impact of postdeposition annealing upon film properties of atomic layer deposition-grown Al2O3 on GaN;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-01

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