Low‐temperature epitaxy of Si and Ge by direct ion beam deposition-Reference-Cited by-同舟云学术

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Low‐temperature epitaxy of Si and Ge by direct ion beam deposition

Published:1987-07 Issue:4 Volume:5 Page:2135-2139
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Zuhr R. A.,Appleton B. R.,Herbots N.,Larson B. C.,Noggle T. S.,Pennycook S. J.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.574935

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of Crystalline Si Thin Films for Photovoltaics;physica status solidi (RRL) – Rapid Research Letters;2022-10-07

2. Spatial Energy Distributions of Sputtered Atoms and Reflected Particles during Kr+and Ar+Ion Beam Sputtering of Si and Ge;Japanese Journal of Applied Physics;1999-12-15

3. Ion-beam deposition of nanocrystalline and epitaxial silicon films using silane plasma;Surface and Coatings Technology;1999-09

4. Low-Temperature Silicon Epitaxy by Ion-Assisted Deposition;Solid State Phenomena;1999-04

5. A phase-space-compressing, mass-selecting beamline for hyperthermal, focused ion beam deposition;Review of Scientific Instruments;1998-12

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