1. Solid source molecular beam epitaxy of GaInAsP/InP: Growth mechanisms and machine operation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05
2. Siamese cell for group V flux measurements, uniform arsenide phosphide alloys, and quaternary lasers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05
3. GaInAsP gas-source MBE technology;Thin Solid Films;1995-10
4. Manifold arsenic and phosphorus effusion source for GaAsP alloys;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-09
5. MOLECULAR BEAM EPITAXY WITH GASEOUS SOURCES;Integrated Optoelectronics;1995