Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors
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Published:2001
Issue:2
Volume:19
Page:327
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Yang Jianan,Denton John P.,Neudeck Gerold W.
Publisher
American Vacuum Society
Subject
General Engineering