Effect of ultrathin Fe dusting layer on electrical transport properties of few-layer MoS2 field-effect transistors-Reference-Cited by-同舟云学术

Effect of ultrathin Fe dusting layer on electrical transport properties of few-layer MoS2 field-effect transistors

Published:2017-07 Issue:4 Volume:35 Page:041510
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Wang Ying¹,Qi Long¹,Wu Yihong¹

Affiliation:

1. Information Storage and Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583

Funder

Ministry of Education - Singapore (MOE)

National Research Foundation Singapore (NRF)

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4986195

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