Fundamental Electronic Transport Properties of GaAs Evaporated Films-Reference-Cited by-同舟云学术

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Fundamental Electronic Transport Properties of GaAs Evaporated Films

Published:1972-01 Issue:1 Volume:9 Page:502-506
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Takahashi Kiyoshi

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1316670

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical properties of tellurium-doped gallium arsenide thin films;Journal of Materials Science Letters;1987-02

2. Subject Categories and References Year 1972;Molecular Beam Epitaxy of III–V Compounds;1984

3. GaAs, GaP, and GaAs1−xPx films deposited by molecular beam epitaxy;Physica Status Solidi (a);1975-09-16

4. Molecular beam epitaxy;Progress in Solid State Chemistry;1975-01

5. Impurity doping effect of molecular-beam epitaxial GaAs films;Electrical Engineering in Japan;1974

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