SiC formation by C60 molecules as a precursor: A synchrotron-radiation photoemission study of the carbonization process-Reference-Cited by-同舟云学术

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SiC formation by C60 molecules as a precursor: A synchrotron-radiation photoemission study of the carbonization process

Published:2006-01 Issue:1 Volume:24 Page:70-73
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Cheng C.-P.,Pi T.-W.,Ouyang C.-P.,Wen J.-F.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2134712

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism of SiC formation by Si surface carbonization using CO gas;Applied Surface Science;2024-07

2. Selective Fabrication of SiC/Si Heterojunction Diodes by Local Laser Annealing Process for Microwave Circuit Applications;IEEE Journal of the Electron Devices Society;2017-09

3. Selective Fabrication of SiC/Si Diodes by Excimer Laser Under Ambient Conditions;IEEE Electron Device Letters;2016-02

4. High-temperature desorption of C60covalently bound to6H-SiC(0001)-(3×3);Physical Review B;2011-08-16

5. Fullerene adsorption on semiconductor surfaces;Surface Science Reports;2010-07-15

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