Properties of gate quality silicon dioxide films deposited on Si–Ge using remote plasma-enhanced chemical vapor deposition with no preoxidation-Reference-Cited by-同舟云学术

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Properties of gate quality silicon dioxide films deposited on Si–Ge using remote plasma-enhanced chemical vapor deposition with no preoxidation

Published:1999 Issue:2 Volume:17 Page:460
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Sharma R.,Fretwell J. L.,Ngai T.,Banerjee S.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Different Growth-Temperature Effects on the Liquid-Phase-Deposited SiO[sub 2] Grown on Strained SiGe;Electrochemical and Solid-State Letters;2010

2. Determination of the absolute value of the semiconductor surface potential by the quasi-static capacitance-voltage characteristics of an MIS structure;Semiconductors;2003-06

3. ZrO2 as a high-K dielectric for strained SiGe MOS devices;Bulletin of Materials Science;2002-11

4. Oxygen beam SIMS depth profiling of Si1−xGexlayers: transient processes;Surface and Interface Analysis;2002-07-24

5. A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure;Journal of Electronic Materials;2002-05

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