Magnetron etching of GaAs: Etch characteristics and surface characterization-Reference-Cited by-同舟云学术

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Magnetron etching of GaAs: Etch characteristics and surface characterization

Published:1992-07 Issue:4 Volume:10 Page:1147-1151
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Meyyappan M.,McLane G. F.,Cole M. W.,Laraeu R.,Namaroff M.,Sasserath J.,Sundararaman C. S.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.578217

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review: Back-Side via Hole Etching Process for Grounding GaAs Based Monolithic Microwave Integrated Circuits;Journal of The Electrochemical Society;2005

2. The oxidation of surface layers during reactive ion etching of GaAs in CF2Cl2+O2 and O2 plasmas;Applied Surface Science;1999-01

3. Magnetron ion etching of through-wafer via holes for GaAs monolithic microwave integrated circuits using SiCl[sub 4];Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-09

4. FUNDAMENTAL STUDIES OF HALOGEN REACTIONS WITH III-V SEMICONDUCTOR SURFACES;Annual Review of Physical Chemistry;1996-10

5. Surface characterization of sidewall protection film on GaAs steep via holes etched by magnetron ion etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-01

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