Patterning of octadecylsiloxane self-assembled monolayers on Si(100) using Ar([sup 3]P[sub 0,2]) atoms-Reference-Cited by-同舟云学术

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Patterning of octadecylsiloxane self-assembled monolayers on Si(100) using Ar([sup 3]P[sub 0,2]) atoms

Published:1999 Issue:3 Volume:17 Page:1087
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hill S. B.,Haich C. A.,Dunning F. B.,Walters G. K.,McClelland J. J.,Celotta R. J.,Craighead H. G.,Han J.,Tanenbaum D. M.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabricating arrays of Si(110)/Si(100) microstructures by atom lithography using organosilane self-assembled monolayers;Journal of Physics: Conference Series;2009-09-01

2. Resource Letter AON-1: Atom optics, a tool for nanofabrication;American Journal of Physics;2007-05

3. Microfabrication of Silicon Using Self-Assembled Monolayer Resist and Metastable Helium Beam;Japanese Journal of Applied Physics;2006-10-06

4. Self-Assembled Monolayer on Silicon;Nanocrystalline Materials;2006

5. Fabrication of a gold pattern with a nanoscale edge by using heptanethiol self-assembled monolayers and a metastable helium beam;Applied Surface Science;2005-02

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