Si/Si1−xGex photodetectors using three-dimensional growth modes to enhance photoresponse at λ=1550 nm-Reference-Cited by-同舟云学术

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Si/Si1−xGex photodetectors using three-dimensional growth modes to enhance photoresponse at λ=1550 nm

Published:2000-03 Issue:2 Volume:18 Page:588-592
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Janz S.,Baribeau J.-M.,Lockwood D. J.,McCaffrey J. P.,Moisa S.,Rowell N. L.,Xu D.-X.,Lafontaine H.,Pearson M. R. T.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.582231

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Near-Infrared Detectors;Silicon Heterostructure Devices;2007-12-13

2. Near-Infrared Detectors;Silicon Heterostructure Handbook;2005-11

3. Self-assembled SiGe dots;SPIE Proceedings;2005-03-25

4. Resonant Raman scattering in GeSi/Si superlattices with GeSi quantum dots;Journal of Experimental and Theoretical Physics Letters;2005-01

5. Reduced pressure–chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3μm photo-detection;Journal of Crystal Growth;2003-07

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