MOS-diode characteristics of ultrathin Al[sub 2]O[sub 3] gate dielectrics after exposure to an electron-cyclotron-resonance plasma stream-Reference-Cited by-同舟云学术

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MOS-diode characteristics of ultrathin Al[sub 2]O[sub 3] gate dielectrics after exposure to an electron-cyclotron-resonance plasma stream

Published:2005 Issue:4 Volume:23 Page:1480
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Jin Yoshito,Saito Kunio,Shimada Masaru,Ono Toshiro

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of tantalum oxy-nitrides deposited by ECR sputtering;Vacuum;2008-10

2. Effects of Electron-Cyclotron-Resonance Oxygen Plasma Irradiation on Properties of Insulator/Ge-Semiconductor Interfaces Prior to Germanium Nitride Formation;Japanese Journal of Applied Physics;2008-09-19

3. Enhanced field emission from printed CNTs by high-temperature sintering and plasma bombarding in hydrogen;Microelectronics Journal;2008-01

4. Fabrication of Ta2O5∕GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques;Applied Physics Letters;2007-04-02

5. Characterization of Metal Insulator Metal Electrical Properties of Electron Cyclotron Resonance Plasma Deposited Ta2O5;Japanese Journal of Applied Physics;2006-09-22

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