Solid‐state reaction of Ti and Ni thin films with aluminum nitride-Reference-Cited by-同舟云学术

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Solid‐state reaction of Ti and Ni thin films with aluminum nitride

Published:1996-07 Issue:4 Volume:14 Page:2564-2569
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

He Xiangjun,Tao Kun,Fan Yudian

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579982

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of columnar microstructure on diffusion reaction between Ti thin films and aluminum nitride ceramics;Surface and Coatings Technology;2019-12

2. Microstructural Development of the AlN/Ti Diffusion Couple Annealed at 1000°C;Journal of the American Ceramic Society;2008-04

3. Microstructural Characterization and Phase Development at the Interface Between Aluminum Nitride and Titanium After Annealing at 1300o-1500oC;Journal of the American Ceramic Society;2006-04

4. The influence of interface roughness on electrical transport in nanoscale metallic multilayers;Journal of Applied Physics;2005-09-15

5. Dielectric properties of AlNx thin films prepared by RF magnetron sputtering of Al using a N2/Ar sputtering gas mixture;Thin Solid Films;2004-12

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