Deposition, post-deposition annealing, and characterization of epitaxial Ge films grown on Si(100) by pyrolysis of GeH4-Reference-Cited by-同舟云学术

Deposition, post-deposition annealing, and characterization of epitaxial Ge films grown on Si(100) by pyrolysis of GeH4

Published:1988-05 Issue:3 Volume:17 Page:229-237
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Green M. L.,Ali Y. S.,Brasen D.,Nakahara S.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02652183.pdf

Reference16 articles.

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2. Semiconductor-Based Heterostructures: Interfacial Structure and Stability, eds. M. L. Green, J. E. E. Baglin, G. Y. Chin, H. W. Deckman, W. Mayo and D. Narasinham, The Metallurgical Society, Pittsburgh, Pa., 1986.

3. R. D. Dupuis, J. C. Bean, J. M. Brown, A. T. Macrander, R. C. Miller and L. C. Hopkins, J. Electron. Mater. 16, 69 (1987).

4. P. D. Dapkus, J. Cryst. Growth 68, 345 (1984).

5. D. G. Dumin, J. Electrochem. Soc. 117, 95 (1970).

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