Characterization of silicon ion-implantation damage in single-strained-layer (InGa)As/GaAs quantum wells-Reference-Cited by-同舟云学术

Characterization of silicon ion-implantation damage in single-strained-layer (InGa)As/GaAs quantum wells

Published:1988-09 Issue:5 Volume:17 Page:405-409
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Myers D. R.,Arnold G. W.,Fritz I. J.,Dawson L. R.,Biefeld R. M.,Hills C. R.,Doyle B. L.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02652126.pdf

Reference14 articles.

1. H. Morkoc, T. Henderson, W. Kopp, and C. K. Peng, Electron. Lett.22, 578 (1986).

2. T. Henderson, M. I. Aksun, C. K. Peng, H. Morkoc, P. C. Chao, P. M. Smith, and K.-H. G. Duh, and L. F. Lester, IEEE Electron. Dev. Lett.EDL-7, 649 (1986).

3. S. H. Wemple, L. A. D’Asaro, H. Fukui, J. C. Irvin, H. M. Cox, J. V. DiLorenzo, J. C. M. Hwang, and W. O. W. Schlosser, “GaAs Power FET Design Principles, Fabrication Technologies, and Material Technology,” inGaAs FET Principles and Technology, J. V. DiLorenzo and D. D. Khandelwal, editors (Artech House, Dedham, MA, 1982). pp. 279–306.

4. H. Baratte, P. M. Solomon, D. C. LaTulipe, T. N. Jackson, D. J. Frank, and S. L. Wright, IEEE Electron. Dev. Lett.EDL-8, 486 (1987).

5. S. Adachi and S. Yamahata, Appl. Phys. Letts.51,1265 (1987).

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Issues in the realization of strained-layer quantum well optoelectronic devices;Optical and Quantum Electronics;1991

2. Thermal interdiffusion in InGaAs/GaAs and GaAsSb/GaAs strained quantum wells as a function of doping density;Optical and Quantum Electronics;1991

3. Thermal interdiffusion in InGaAs/GaAs strained quantum wells as a function of doping density;Superlattices and Microstructures;1991-01

4. Low threshold current implanted‐planar buried‐heterostructure graded‐index separate confinement heterostructure laser in GaAs/AlGaAs;Applied Physics Letters;1990-05-14

5. Thermal processing of strained GaInAs/GaAs high hole mobility transistor structures;Applied Physics Letters;1990-03-19