Si-and Be-implantations in lnP:Fe activated by halogen lamp rapid thermal annealing-Reference-Cited by-同舟云学术

Si-and Be-implantations in lnP:Fe activated by halogen lamp rapid thermal annealing

Published:1988-07 Issue:4 Volume:17 Page:315-320
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Rao Mulpuri V.,Keating Michael P.,Thompson Phillip E.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02652112.pdf

Reference28 articles.

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2. S. J. Pearton, K. D. Cummings, and G. P. Vella-Coleiro, J. Electrochem. Soc.132, 2743 (1985).

3. S. S. Gill and B. J. Sealy, J. Electrochem. Soc.133, 2590 (1986).

4. P. E. Thompson and H. B. Dietrich, Inst. Phys. Conf. Ser. No. 83 Int. Symp. GaAs and Related Compounds, Las Ve-gas, Nevada, 1986) p.271 (1987).

5. W. M. Paulson, R. N. Legge, and C. E. Wetzel, J. Electron. Mater.16, 187 (1987).

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