Physisorption of krypton on thermally oxidized silicon wafers
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/BF00241709.pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. New apparatus for measuring surface areas as low as 0.1 cm(2);Catalysis Surveys from Japan;1999
2. Measurement of 0.1 cm2 surface areas by xenon adsorption at liquid oxygen temperature using an adsorption apparatus with a temperature-compensated, differential tensimeter of symmetrical design;Review of Scientific Instruments;1997-12
3. Measurement of 1 cm2 surface areas by krypton adsorption using an adsorption apparatus with a temperature‐compensated, differential tensimeter of symmetrical design;Review of Scientific Instruments;1995-10
4. Direct Determination of Effective Bet-Area of Xe, Kr, and CH4;Journal of Catalysis;1995-08
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