RF-MEMS SPDT Capacitive Switch: Accelerating the Performance in B5G Applications
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-7077-3_26
Reference21 articles.
1. Angira M, Rangra K (2015) Design and investigation of a low insertion loss, broadband, enhanced self and hold down power RF-MEMS switch. Microsyst Technol 21:1173–1178. https://doi.org/10.1007/s00542-014-2188-6
2. Angira M, Rangra KJ (2016) A novel design for low insertion loss, multi-band RF-MEMS switch with low pull-in voltage. Eng Sci Technol an Int J. 19:171–177. https://doi.org/10.1016/j.jestch.2015.07.001
3. Angira M, Bansal D, Kumar P et al (2019) A novel capacitive RF-MEMS switch for multi-frequency operation. Superlattices Microstruct 133:1–7. https://doi.org/10.1016/j.spmi.2019.106204
4. Bansal D, Kumar P, Kumar A (2021) Improvement of RF MEMS devices by spring constant scaling laws. J Comput Electron 20:1006–1011. https://doi.org/10.1007/s10825-021-01657-z
5. Chae U, Yu HY, Lee C, Cho IJ (2020) A hybrid RF MEMS switch actuated by the combination of bidirectional thermal actuations and electrostatic holding. IEEE Trans Microw Theory Tech 68:3461–3470. https://doi.org/10.1109/TMTT.2020.3003553
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