Computing Transient Response of Drain Current for High Electron Mobility Transistor in Presence of Hot Electrons
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Publisher
Springer Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-16-0275-7_2
Reference13 articles.
1. Ahsan SA, Ghosh S, Khandelwal S, Chauhan YS (2017) Analysis and modeling of cross-coupling and substrate capacitance in GaN HEMTs for power-electronic applications. IEEE Trans Electron Devices 64(3):816–823
2. Zanato D, Gokden S, Balkan N, Ridley BK, Schaff WJ (2004) The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN. Semicond Sci Technol 19(3):427–432
3. Kumar A, Pathak NP (2014) Design and characterization of a wideband p-HEMT low noise amplifier. In: IEEE International Conference on Advances in Computing, Communications and Informatics
4. Wei J, Zhang M, Li B, Tang X, Chen KJ (2019) An analytical investigation on the charge distribution and gate control in the normally-off GaN double-channel MOS-HEMT. IEEE Trans Electron Devices 65(7):2757–2764
5. Alsharcf M, Granzner R, Ture E, Quay R, Racko J, Breza J, Schwierz F (2014) Design of GaN Tri-gate HEMTs. In: The 10thInternational Conference on Advanced Semiconductor Devices and Microsystems
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