Comparisons in L32 2k-Factorial and L25 Taguchi for the 16 nm FinFET Statistical Optimization Applications
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Publisher
Springer Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-13-9539-0_41
Reference21 articles.
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3. Vidya, S., Khan, A., Kamat, S.V., Venkritesh, V.: 3D FinFET for next generation nano devices. In: 2018 International Conference on Current Trends Towards Converging Technologies (ICCTCT) (2018). https://doi.org/10.1109/icctct.2018.8550967
4. Kwon, D., Chatterjee, K., Tan, A.J., Yadav, A.K., Zhou, H., Sachid, A.B., Salahuddin, S.: Improved subthreshold swing and short channel effect in FDSOI n-channel negative capacitance field effect transistors. IEEE Electron Device Lett. 39(2), 300–303 (2018)
5. Gill, A., Madhu, C., Kaur, P.: Investigation of short channel effects in bulk MOSFET and SOI FinFET at 20 nm node technology. In: 2015 Annual IEEE India Conference (INDICON) (2015). https://doi.org/10.1109/indicon.2015.7443263
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