Design and Analysis of an Integrated Class-D Power Output Stage in a 130 nm SOI-BCD Technology
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Publisher
Springer Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-33-6893-4_30
Reference12 articles.
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2. Wessels P et al (2007) Advanced BCD technology for automotive audio and power applications. Solid-State Electron 51(2):195–211. https://doi.org/10.1016/j.sse.2007.01.019
3. van der Pol JA, et al (2000) A-BCD: An economic 100 V RESURF silicon-on-insulator BCD technology for consumer and automotive applications. In: 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), IEEE, 22–25 May 2000. https://doi.org/10.1109/ISPSD.2000.856836.
4. Swanenberg MJ, Ludikhuize AW, Grakist A (2003) Applying DMOSTs, diodes and thyristors above and below substrate in thin layer SOI. In: Proceedings of ISPSD ‘03. 2003 IEEE 15th international symposium on power semiconductor devices and ICs, 2003, pp 14–17. https://doi.org/10.1109/ISPSD.2003.1225271
5. Fairchild Semiconductor Corporation (2008) Design Guide for Selection of Bootstrap Components, ser”, Application Note AN-9052, October 2008
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