Author:
Prateek Jain ,Deepak Kumar
Reference15 articles.
1. Adrian M. Ionescu and Heiki Riell. “Tunnel Field Effect Transistor as Energy efficient switches”. Nature 479, pp. 329–337, Nov. 2011.
2. M. Luiser, G. Klimeck, “Performance comparison of tunneling field effect transistors (H-TFET) for steep subthresholdswing,” IEDM Tech. Dig., pp. 785–788, 2011.
3. Zhang, W. Zhao, and A. Seabaugh, “Low-subthreshold-swing tunnel transistors,” IEEE Electron Device Lett., vol. 27, no. 4, pp. 297–300, Apr. 2006.
4. Method of Fabricating a Silicon TFET with high drive current, by M. Zhu, S.S. Tan, E.H. Toh, E. Quek, (2013, Feb.5). Patent, US 8,368,127 B2.
5. P. Y. Wang and B. Y. Tsui, “Band Engineering to Improve Average Subthreshold Swing by Suppressing Low Electric Field Band-to-Band Tunneling With Epitaxial Tunnel Layer Tunnel FET Structure,” IEEE Trans. Nanotechnol., vol. 15, no. 1, pp. 74–79, Jan. 2016.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献