Effects of Proton Irradiation on Optocouplers with Bipolar and MOSFET Technologies, a Comparison of In-Situ and Ex-Situ Results-Reference-Cited by-同舟云学术

Effects of Proton Irradiation on Optocouplers with Bipolar and MOSFET Technologies, a Comparison of In-Situ and Ex-Situ Results

Published:2023 Issue: Volume: Page:661-670
ISSN:1876-1100
Container-title:Lecture Notes in Electrical Engineering
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Author:

Neitzert Heinz-Christoph,Palma Luigi,Denker Andrea,Bundesmann Juergen,Dittwald Alina Hanna,Lang Felix

Publisher

Springer Nature Singapore

Link

https://link.springer.com/content/pdf/10.1007/978-981-19-7753-4_50

Reference15 articles.

1. Li D, Dong G, Li W, Wang L (2015) High performance organic-inorganic perovskite-optocoupler based on low-voltage and fast response perovskite compound photodetector. Sci Rep 5:7902

2. Reed RA, Marshall PW, Johnston AH, Barth JL, Marshall CJ, LaBel KA, D’Ordine M, Kim HS, Carts MA (1998) Emerging optocoupler issues with energetic particle-induced transients and permanent radiation degradation. IEEE Trans Nucl Sci 45:2833–2841

3. Gorelick JL, Ladbury R (2004) Proton, neutron, and gamma degradation of optocouplers. IEEE Trans Nucl Sci 51:3730–3735

4. Miyahira TF, Johnston AH (2007) Trends in optocoupler radiation degradation. IEEE Trans Nucl Sci 49:1104–1109

5. RENESAS: Current Transfer Ratio (CTR) and response time of photocouplers/optocouplers. https://www.renesas.com/us/en/products/interface-connectivity/optoelectronics/current-transfer-ratio-ctr-and-response-time-photocouplers-optocouplers

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