Comparison of SRAM Cell Layout Topologies to Estimate Improvement in SER Robustness in 28FDSOI and 40 nm Technologies-Reference-Cited by-同舟云学术

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Comparison of SRAM Cell Layout Topologies to Estimate Improvement in SER Robustness in 28FDSOI and 40 nm Technologies

Published:2017 Issue: Volume: Page:414-420
ISSN:1865-0929
Container-title:Communications in Computer and Information Science
language:
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Author:

Ilakal Anand,Grover Anuj^ORCID

Publisher

Springer Singapore

Link

http://link.springer.com/content/pdf/10.1007/978-981-10-7470-7_41

Reference5 articles.

1. Heijmen, T., et al.: 2004 IEEE IRPS. Proceedings, pp. 675–676 (2004)

2. Chatterjee, I., et al.: IEEE Trans. Nuclear Sci. 61(6), December 2014

3. Bosser, A., et al.: Rad and Its Effects on Components and Systems (RADECS) (2015)

4. Dong, W., et al.: IEEE/ACM ICCAD Proceedings, pp. 378–385 (2008)

5. Messenger, G.C.: IEEE Trans. Nuclear Sci. NS-29(6), December 1982

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