High-Speed Less Area CNTFET Ternary Half Adder Using Pseudologic
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-19-6661-3_39
Reference18 articles.
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2. Sharifi MJ, Ahmadian M (2018) Novel designs for digital gates based on single electron devices to overcome the traditional limitation on speed and bit error rate. Microelectron J 73:12–17
3. AlKaldy E, Majeed AH, Zainal MS, Nor DM (2020) Optimal multiplexer design in quantum-dot cellular automata: says one researcher in Indonesian. J Electr Eng Comput Sci 17(1): 148–155
4. Taheri Tari H, Dabaghi Zarandi A, Reshadinezhad MR (2019) A high- performance CNTFET-based complete adder cell for use in carry ripple, carry choose, and carry skip adders: says the paper. Microelectron Eng 215:110980
5. Davari Shalamzari Z, Dabbaghi Zarandi A, Reshadinezhad MR (2019) The publication describes it as “a high-performance CNTFET-based full adder cell for usage in carry ripple, carry choice, and carry skip adders. Microelectron Eng 215:110980
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1. Carbon Nanotube Field Effect Transistors: An Aspect of Low Power and High Frequency Applications of CNTFETs;2023 International Conference on Disruptive Technologies (ICDT);2023-05-11
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