Author:
Vijayalakshmi V.,Mohan Kumar Naik B.
Publisher
Springer Nature Singapore
Reference17 articles.
1. T. Skotnicki, J.A. Hutchby, T.-J. King, F. Boeuf, The end of CMOS scaling toward the introduction of new materials and structural changes to improve MOSFET performance. IEEE Circ. Devices Mag. 21(1), 16–26 (2005)
2. A. Chin, S.R. McAlister, The power of functional scaling: beyond the power consumption challenge and scaling roadmap. IEEE Circ. Devices Mag. 21(1), 27–35 (2005)
3. S.E. Thompson, R.S. Chau, T. Ghani, K. Mistry, S. Tyagi, M.T. Bohr, In search of “forever,” continued transistor scaling one new material at a time. IEEE Trans. Semicond. Manuf. 26–35 (2005)
4. Y. Taur, CMOS scaling beyond 0.1 [mu] m: how far can it go?, in Proceedings of 1999 International Symposium on VLSI Technology, Systems, Applications (1999), pp. 6–9
5. D.J. Frank, R.H. Dennard, E. Nowak, P.M. Solomon, Y. Taur, W.H.-S. Philip, Device scaling limits of Si MOSFET’s and their application dependencies, in Proceedings of IEEE, vol. 89 (2001), pp. 259–288
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