Fe2HfZ (Z = Si, Ge, Sn), Promising New Candidate Materials for Electronic and Thermoelectric Applications
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-97-1916-7_27
Reference25 articles.
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3. Berche A, Noutack MT, Doublet M-L, Jund P (2020) Unexpected band gap increase in the Fe2VAl Heusler compound. Mater Today Phys 13:100203
4. Bilc DI, Hautier G, Waroquiers D, Rignanese G-M, Ghosez P (2015) Low-dimensional transport and large thermoelectric power factors in bulk semiconductors by band engineering of highly directional electronic states. Phys Rev Lett 114(13):136601
5. Graf T, Felser C, Parkin SS (2011) Simple rules for the understanding of Heusler compounds. Prog Solid State Chem 39(1):1–50
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